unisonic technologies co., ltd UT120N03 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-581.a 120a, 30v n-channel power mosfet ? description the utc UT120N03 is a n-channel power mosfet using utc?s advanced trench technology to provide customers with a minimum on-state resistance and superior switching performance. the utc UT120N03 is generally applied in dc to dc convertors or synchronous rectifications. ? features * i d = 120a * v ds =30v * r ds(on) =3.8m ? @ v gs =10v * low gate charge (typical 54nc) * fast switching * 100% avalanche tested * high power and current handling capability ? symbol 1.gate 3.source 2.drain to-220 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT120N03l-ta3-t UT120N03g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source free datasheet http:///
UT120N03 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-581.a ? absolute maximum ratings (t c =25c, unless otherwise specified ) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous i d 120 a drain current pulsed (note 2) i dm 480 a single pulsed avalanche energy (note 3) e as 240 mj peak diode recovery dv/dt (note 4) dv/dt 6.0 v/ns power dissipation (t c =25c) p d 125 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those valu es beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 0.61mh, i as = 28a, v dd = 27v, r g = 25 ? , starting t j = 25c 4. i sd 80a, di/dt 200a/s, v dd bv dss , starting t j = 25c 5. calculated continuous current based on maximum allowable junction temperature. package limitation current is 100a. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1 c/w free datasheet http:///
UT120N03 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-581.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v, t c =25c 30 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a mv/c drain-source leakage current i dss v ds =30v, v gs =0v 1 a forward v gs =+20v, v ds =0v 0.02 100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -0.02 -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 3.0 v v gs =10v, i d =35a 3.8 m ? static drain-source on-state resistance r ds(on) v gs =4.5v, i d =35a 6.4 m ? dynamic parameters input capacitance c iss 2990 pf output capacitance c oss 585 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 340 pf switching parameters total gate charge q g 54 72 nc gate to source charge q gs 8.0 nc gate to drain charge q gd v gs =5v, v ds =15v, i d =35a (note 1, 2) 10 nc turn-on delay time t d(on) 9 ns rise time t r 96 ns turn-off delay time t d(off) 47 ns fall-time t f v dd =15v, i d =35a, r g =4.7 ? , v gs =5v (note 1, 2) 37 ns gate resistance r g 2.0 ? source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =120a, v gs =0v 1.25 v maximum body-diode continuous current i s 120 a maximum body-diode pulsed current i sm 480 a notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature free datasheet http:///
UT120N03 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-581.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms free datasheet http:///
UT120N03 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-581.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms free datasheet http:///
UT120N03 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-581.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. free datasheet http:///
|
